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| jmnic product specification silicon pnp power transistors 2SA1068 description ? with to-3 package ? low collector saturation voltage ? high transition frequency applications ? for audio and general purpose amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i cm collector current-peak -14 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA1068 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -150 v v cesat collector-emitter saturation voltage i c =-5a ;i b =-0.5a -2.0 v v besat base-emitter saturation voltage i c =-5a ;i b =-0.5a -2.5 v i cbo collector cut-off current v cb =-150v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-3a ; v ce =-4v 60 150 f t transition frequency i c =-0.5a ; v ce =-10v 50 mhz jmnic product specification 3 silicon pnp power transistors 2SA1068 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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